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datasheet pleasereadtheimportantnoticeandwarningsattheendofthisdocument v2.1 www.infineon.com 2017-06-27 AIGW40N65H5 highspeedswitchingseriesfifthgeneration highspeedfastigbtintrenchstop tm 5technology featuresandbenefits: highspeedh5technologyoffering: ?best-in-classefficiencyinhardswitchingandresonant topologies ?plugandplayreplacementofpreviousgenerationigbts ?650vbreakdownvoltage ?lowgatechargeq g ?maximumjunctiontemperature175c ?dynamicallystresstested ?qualifiedaccordingtoaec-q101 ?greenpackage(rohscompliant) ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?off-boardcharger ?on-boardcharger ?dc/dcconverter ?power-factorcorrection packagepindefinition: ?pin1-gate ?pin2&backside-collector ?pin3-emitter keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package AIGW40N65H5 650v 40a 1.66v 175c ag40eh5 pg-to247-3 g c e 1 2 3
datasheet 2 v2.1 2017-06-27 AIGW40N65H5 highspeedswitchingseriesfifthgeneration tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 g c e 1 2 3
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datasheet 4 v2.1 2017-06-27 AIGW40N65H5 highspeedswitchingseriesfifthgeneration electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance e ies - 2300 - output capacitance e oes - 43 - reverse transfer capacitance e res - 9 - ce =25v, v ge =0v,f=1mhz pf gate charge s g v cc =520v, i c =40.0a, v ge =15v - 92.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case n e - 13.0 - nh switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time v d(on) - 20 - ns rise time v r - 11 - ns turn-off delay time v d(off) - 149 - ns fall time v f - 11 - ns turn-on energy g on - 0.36 - mj turn-off energy g off - 0.11 - mj total switching energy g ts - 0.47 - mj v vj =25c, v cc =400v, i c =20.0a, v ge =0.0/15.0v, r g(on) =15.0 , r g(off) =15.0 , l =30nh, c =30pf l , c fromfig.e energy losses include tail and diode reverse recovery. turn-on delay time v d(on) - 18 - ns rise time v r - 4 - ns turn-off delay time v d(off) - 156 - ns fall time v f - 24 - ns turn-on energy g on - 0.08 - mj turn-off energy g off - 0.03 - mj total switching energy g ts - 0.11 - mj v vj =25c, v cc =400v, i c =5.0a, v ge =0.0/15.0v, r g(on) =15.0 , r g(off) =15.0 , l =30nh, c =30pf l , c fromfig.e energy losses include tail and diode reverse recovery. g c e 1 2 3
datasheet 5 v2.1 2017-06-27 AIGW40N65H5 highspeedswitchingseriesfifthgeneration switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =150c turn-on delay time v d(on) - 19 - ns rise time v r - 12 - ns turn-off delay time v d(off) - 186 - ns fall time v f - 17 - ns turn-on energy g on - 0.55 - mj turn-off energy g off - 0.22 - mj total switching energy g ts - 0.77 - mj v vj =150c, v cc =400v, i c =20.0a, v ge =0.0/15.0v, r g(on) =15.0 , r g(off) =15.0 , l =30nh, c =30pf l , c fromfig.e energy losses include tail and diode reverse recovery. turn-on delay time v d(on) - 17 - ns rise time v r - 5 - ns turn-off delay time v d(off) - 212 - ns fall time v f - 36 - ns turn-on energy g on - 0.16 - mj turn-off energy g off - 0.07 - mj total switching energy g ts - 0.23 - mj v vj =150c, v cc =400v, i c =5.0a, v ge =0.0/15.0v, r g(on) =15.0 , r g(off) =15.0 , l =30nh, c =30pf l , c fromfig.e energy losses include tail and diode reverse recovery. g c e 1 2 3
datasheet 6 v2.1 2017-06-27 AIGW40N65H5 highspeedswitchingseriesfifthgeneration figure 1. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 200 225 250 275 figure 2. collectorcurrentasafunctionofcase temperature ( v ge 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 figure 3. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 0 20 40 60 80 100 120 v ge = 20v 18v 15v 12v 10v 8v 7v 6v 5v figure 4. typicaloutputcharacteristic ( t vj =150c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 0 20 40 60 80 100 120 v ge = 20v 18v 15v 12v 10v 8v 7v 6v 5v g c e 1 2 3
datasheet 7 v2.1 2017-06-27 AIGW40N65H5 highspeedswitchingseriesfifthgeneration figure 5. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 20 40 60 80 100 120 t j = 25c t j = 150c figure 6. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 0 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i c = 5a i c = 10a i c = 20a i c = 40a figure 7. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =15/0v, r g =15 ,dynamictestcircuitin figure e) k c ,collectorcurrent[a] t ,switchingtimes[ns] 0 20 40 60 80 100 120 1 10 100 1000 t d(off) t f t d(on) t r figure 8. typicalswitchingtimesasafunctionofgate resistor (inductiveload, t vj =150c, v ce =400v, v ge =15/0v, i c =20a,dynamictestcircuitin figure e) t g ,gateresistor[ ] t ,switchingtimes[ns] 5 15 25 35 45 55 65 75 85 1 10 100 1000 t d(off) t f t d(on) t r g c e 1 2 3
datasheet 8 v2.1 2017-06-27 AIGW40N65H5 highspeedswitchingseriesfifthgeneration figure 9. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =400v, v ge =15/0v, i c =20a, r g =15 ,dynamictestcircuitinfigure e) v vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 1000 t d(off) t f t d(on) t r figure 10. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.4ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 0 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 typ. min. max. figure 11. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =15/0v, r g =15 ,dynamictestcircuitin figure e) k c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 20 40 60 80 100 120 0 1 2 3 4 5 6 7 8 e off e on e ts figure 12. typicalswitchingenergylossesasa functionofgateresistor (inductiveload, t vj =150c, v ce =400v, v ge =15/0v, i c =20a,dynamictestcircuitin figure e) t g ,gateresistor[ ] e ,switchingenergylosses[mj] 5 15 25 35 45 55 65 75 85 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 e off e on e ts g c e 1 2 3
datasheet 9 v2.1 2017-06-27 AIGW40N65H5 highspeedswitchingseriesfifthgeneration figure 13. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =400v, v ge =15/0v, i c =20a, r g =15 ,dynamictestcircuitin figure e) v vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =150c, v ge =15/0v, i c =20a, r g =15 ,dynamictestcircuitin figure e) ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 200 250 300 350 400 450 500 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 e off e on e ts figure 15. typicalgatecharge ( i c =40a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 20 40 60 80 100 0 2 4 6 8 10 12 14 16 v cc =130v v cc =520v figure 16. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 1 10 100 1000 1e+4 c ies c oes c res g c e 1 2 3
datasheet 10 v2.1 2017-06-27 AIGW40N65H5 highspeedswitchingseriesfifthgeneration figure 17. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] th(j - c) ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: i [s]: 1 0.08245484 7.3e-5 2 0.144197 7.0e-4 3 0.2151774 0.01235548 4 0.1581708 0.08020881 g c e 1 2 3
datasheet 11 v2.1 2017-06-27 AIGW40N65H5 highspeedswitchingseriesfifthgeneration g c e 1 2 3 package drawing pg-to247-3
datasheet 12 v2.1 2017-06-27 AIGW40N65H5 highspeedswitchingseriesfifthgeneration g c e 1 2 3 package drawing pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions
datasheet 13 v2.1 2017-06-27 AIGW40N65H5 highspeedswitchingseriesfifthgeneration revisionhistory AIGW40N65H5 revision:2017-06-27,rev.2.1 previous revision revision date subjects (major changes since last revision) 2.1 2017-06-27 data sheet created g c e 1 2 3 package drawing pg-to247-3 t a b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge t t 90% v ge v ge (t) t t t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i (t) c parasitic inductance l , parasitic capacitor c , relief capacitor c , (only for zvt switching) s s r t t t q q q rr a b rr a b = + = + q a q b v (t) ce v ge (t) i (t) c v (t) ce testing conditions
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